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| Advanced Power MOSFET FEATURES ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current : 10 A (Max.) @ VDS = 200V ! Lower RDS(ON) : 1.185 (Typ.) IRLS610A BVDSS = 200 V RDS(on) = 0.046 ID = 2.5 A TO-220F 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25) Continuous Drain Current (TC=100) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds Value 200 2.5 1.6 12 20 20 2.9 1.9 5.0 19 0.15 - 55 to +150 Units V A A V mJ A mJ V/ns W W/ 300 Thermal Resistance Symbol RJC RJA Characteristic Junction-to-Case Junction-to-Ambient Typ. --Max. 6.6 62.5 Units o C/W Rev. A IRLS610A Electrical Characteristics (TC=25oC unless otherwise specified) Symbol BVDSS BV/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain("Miller") Charge Min. Typ. Max. Units 200 -1.0 -----------------0.19 ------1.9 185 35 14 9 9 20 6 6.1 1.4 2.8 --2.0 100 -100 10 100 1.5 -240 45 20 30 30 50 20 9 --nC ns pF A S V o N-CHANNEL POWER MOSFET Test Condition VGS=0V,ID=250A See Fig 7 VDS=VGS, ID=250A VGS=20V VGS=--20V VDS=200V VDS=160V,TC=125 C VGS=5V,ID=1.25A VDS=40V,ID=1.25A o V/ C ID=250A V nA VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=100V,ID=3.3A, RG=22 See Fig 13 VDS=160V,VGS=5V, ID=3.3A See Fig 6 & Fig 12 Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --------123 0.38 3.3 12 1.5 --A V ns C Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS=2.5A,VGS=0V TJ=25 C,IF=3.3A diF/dt=100A/s o o Notes ; Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature L=5mH, IAS=2.5A, VDD=50V, RG=27, Starting TJ =25oC ISD3.3A, di/dt140A/s, VDDBVDSS , Starting TJ =25oC Pulse Test : Pulse Width = 250s, Duty Cycle 2% Essentially Independent of Operating Temperature N-CHANNEL POWER MOSFET Fig 1. Output Characteristics 11 0 V Top : GS IRL610A Fig 2. Transfer Characteristics 11 0 ID , Drain Current [A] 10 0 ID , Drain Current [A] 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V 10 0 1 0 oC 5 2 oC 5 @Nts: oe 1 V =0V . GS DS 1 0 -1 @Nts: oe 1 2 0 s P l e T s .5 us et 2 T = 2 oC . 5 C - 5 oC 5 1 -1 0 0 2 4 2 V =4 V . 0 3 2 0 s P l e T s .5 us et 6 8 1 0 1 -1 0 10 0 11 0 VDS , Drain-Source Voltage [V] VGS , Gate-Source Voltage [V] Fig 3. On-Resistance vs. Drain Current 4 11 0 Fig 4. Source-Drain Diode Forward Voltage 3 V =5V GS IDR , Reverse Drain Current [A] Drain-Source On-Resistance RDS(on) , [ ] 2 10 0 1 @ N t : T = 2 oC oe J 5 8 1 0 1 0 oC 5 2C 5 1 -1 0 04 . 06 . 08 . o @Nts: oe 1 V =0V . GS 2 2 0 s P l e T s .5 us et 10 . 12 . 14 . V =1 V 0 GS 0 0 2 4 6 ID , Drain Current [A] VSD , Source-Drain Voltage [V] Fig 5. Capacitance vs. Drain-Source Voltage 30 0 C =C +C (C =sotd) iss gs gd ds h r e C =C +C oss ds gd C =C rss gd 6 Fig 6. Gate Charge vs. Gate-Source Voltage 20 4 VGS , Gate-Source Voltage [V] C iss V =4 V 0 DS V =0 V 10 DS 4 V =10V 6 DS Capacitance [pF] 10 8 10 2 C oss @Nts: oe 1 V =0V . GS 2 f=1Mz . H 2 6 0 C rss @Nts:I =33A oe . D 0 0 2 4 6 00 1 0 11 0 VDS , Drain-Source Voltage [V] QG , Total Gate Charge [nC] IRLS610A Fig 7. Breakdown Voltage vs. Temperature 12 . 25 . N-CHANNEL POWER MOSFET Fig 8. On-Resistance vs. Temperature Drain-Source Breakdown Voltage RDS(on) , (Normalized) Drain-Source On-Resistance 20 . BVDSS , (Normalized) 11 . 15 . 10 . 10 . @Nts: oe 1 V =5V . GS 2 I =16 A . D .5 -0 5 -5 2 0 2 5 5 0 7 5 10 0 15 2 10 5 15 7 09 . @Nts: oe 1 V =0V . GS D 05 . 2 I = 2 0 A . 5 08 . -5 7 -0 5 -5 2 0 2 5 5 0 7 5 10 0 o 15 2 10 5 15 7 00 . -5 7 TJ , Junction Temperature [ C] TJ , Junction Temperature [oC] Fig 9. Max. Safe Operating Area Oeaini Ti Ae prto n hs ra i L m t d b R DS(on) s iie y Fig 10. Max. Drain Current vs. Ambient Temperature 10 . ID , Drain Current [A] 11 0 ID , Drain Current [A] 08 . 1 0 s 0 10 0 1m s 1m 0s D C @Nts: oe 1 T = 2 oC .C 5 1 -2 0 2 T = 1 0 oC .J 5 3 Snl Ple . ige us 06 . 1 -1 0 04 . 02 . 1 -3 -1 0 1 0 10 0 11 0 12 0 00 . 2 5 5 0 7 5 10 0 15 2 10 5 VDS , Drain-Source Voltage [V] TA , Ambient Temperature [oC] Thermal Response 102 D=0.5 0.2 101 0.1 0.05 0.02 100 0.01 Fig 11. Thermal Response @ Notes : 1. Z J A (t)=69.4 o C/W Max. 2. Duty Factor, D=t1 /t2 3. TJ M -TA =PD M *Z PDM JA (t) Z (t) , JA single pulse t1 t2 10- 1 - 5 10 10- 4 10- 3 10- 2 10- 1 100 101 102 103 t1 , Square Wave Pulse Duration [sec] N-CHANNEL POWER MOSFET Fig 12. Gate Charge Test Circuit & Waveform IRLS610A Current Regulator 50K 12V 200nF 300nF Same Type as DUT VGS Qg 5V VDS VGS DUT 3mA Qgs Qgd R1 Current Sampling (IG) Resistor R2 Current Sampling (ID) Resistor Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL Vout Vin RG DUT Vin 5V td(on) t on tr td(off) t off tf 10% Vout VDD ( 0.5 rated VDS ) 90% Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms LL VDS Vary tp to obtain required peak ID BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD BVDSS IAS C VDD VDD tp ID RG DUT 5V tp ID (t) VDS (t) Time IRLS610A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms N-CHANNEL POWER MOSFET DUT + VDS -- IS L Driver RG VGS Same Type as DUT VGS VDD * dv/dt controlled by RG * IS controlled by Duty Factor D VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 5V IFM , Body Diode Forward Current IS ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E2CMOSTM EnSignaTM FACT FACT Quiet Series DISCLAIMER FAST a FASTr FRFET GlobalOptoisolator GTO HiSeC I2C ISOPLANAR LittleFET MicroFET MicroPak MICROWIRE OPTOLOGIC a OPTOPLANAR PACMAN POP Power247 PowerTrench a QFET QS QT Optoelectronics Quiet Series SILENT SWITCHER a UHC SMART START UltraFET a SPM VCX STAR*POWER Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. H5 |
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